Gnani, E. : rechercher sur Z-Library

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1

The efficacy of microlearning in improving self-care capability: a systematic review of the literature

Wang, C., Bakhet, M., Roberts, D., Gnani, S., El-Osta, A.

Journal:

Année:

2020

Fichier:

PDF, 482 KB

2020

2

Theory of the Junctionless Nanowire FET

Gnani, E., Gnudi, A., Reggiani, S., Baccarani, G.

Journal:

IEEE Transactions on Electron Devices

Année:

2011

Langue:

english

Fichier:

PDF, 483 KB

english, 2011

3

Measured effectiveness of deep N-well substrate isolation in a 65Â nm pixel readout chip prototype

Liu, Peilian, Garcia-Sciveres, Maurice, Heim, Timon, Krieger, Amanda, Gnani, Dario

Journal:

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Année:

2020

Fichier:

PDF, 3.81 MB

2020

4

Theoretical analysis of the vertical LOCOS DMOS transistor with process-induced stress enhancement

S. Reggiani, M. Denison, E. Gnani, A. Gnudi, G. Baccarani, S. Pendharkar, R. Wise

Journal:

Solid-State Electronics

Année:

2010

Langue:

english

Fichier:

PDF, 1.00 MB

english, 2010

5

Measurement and modeling of the electron impact-ionization coefficient in silicon up to very high temperatures

Reggiani, S., Gnani, E., Rudan, M., Baccarani, G., Corvasce, C., Barlini, D., Ciappa, M., Fichtner, W., Denison, M., Jensen, N., Groos, G., Stecher, M.

Journal:

IEEE Transactions on Electron Devices

Année:

2005

Langue:

english

Fichier:

PDF, 942 KB

english, 2005

6

Physical Model of the Junctionless UTB SOI-FET

Gnani, E., Gnudi, A., Reggiani, S., Baccarani, G.

Journal:

IEEE Transactions on Electron Devices

Année:

2012

Langue:

english

Fichier:

PDF, 672 KB

english, 2012

7

[IEEE IC's (ISPSD) - San Diego, CA, USA (2011.05.23-2011.05.26)] 2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs - Full understanding of hot-carrier-induced degradation in STI-based LDMOS transistors in the impact-ionization operating regime

Poli, S., Reggiani, S., Baccarani, G., Gnani, E., Gnudi, A., Denison, M., Pendharkar, S., Wise, R.

Année:

2011

Langue:

english

Fichier:

PDF, 920 KB

english, 2011

8

TCAD Simulation of Hot-Carrier and Thermal Degradation in STI-LDMOS Transistors

Reggiani, Susanna, Barone, Gaetano, Poli, Stefano, Gnani, Elena, Gnudi, Antonio, Baccarani, Giorgio, Chuang, Ming-Yeh, Tian, Weidong, Wise, Rick

Journal:

IEEE Transactions on Electron Devices

Année:

2013

Langue:

english

Fichier:

PDF, 1.03 MB

english, 2013

9

Characterization and modeling of electrical stress degradation in STI-based integrated power devices

Reggiani, Susanna, Barone, Gaetano, Gnani, Elena, Gnudi, Antonio, Baccarani, Giorgio, Poli, Stefano, Wise, Rick, Chuang, Ming-Yeh, Tian, Weidong, Pendharkar, Sameer, Denison, Marie

Journal:

Solid-State Electronics

Année:

2014

Langue:

english

Fichier:

PDF, 1.98 MB

english, 2014

10

[IEEE ESSDERC 2013 - 43rd European Solid State Device Research Conference - Bucharest, Romania (2013.09.16-2013.09.20)] 2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC) - Modeling and characterization of hot-carrier stress degradation in power MOSFETs (invited)

Reggiani, S., Gnani, E., Gnudi, A., Baccarani, G., Poli, S., Wise, R., Chuang, M. Y., Tian, W., Denison, M.

Année:

2013

Langue:

english

Fichier:

PDF, 815 KB

english, 2013

11

[IEEE 2010 IEEE International Reliability Physics Symposium - Garden Grove (Anaheim), CA, USA (2010.05.2-2010.05.6)] 2010 IEEE International Reliability Physics Symposium - Analysis of HCS in STI-based LDMOS transistors

Reggiani, Susanna, Poli, Stefano, Gnani, Elena, Gnudi, Antonio, Baccarani, Giorgio, Denison, Marie, Pendharkar, Sameer, Wise, Rick, Seetharaman, Sridhar

Année:

2010

Langue:

english

Fichier:

PDF, 695 KB

english, 2010

12

[IEEE ESSDERC 2010 - 40th European Solid State Device Research Conference - Sevilla, Spain (2010.09.14-2010.09.16)] 2010 Proceedings of the European Solid State Device Research Conference - Hot-carrier stress induced degradation in Multi-STI-Finger LDMOS: An experimental and numerical insight

Poli, S., Loi, A., Reggiani, S., Baccarani, G., Gnani, E., Gnudi, A., Denison, M., Pendharkar, S., Wise, R., Seetharaman, S.

Année:

2010

Langue:

english

Fichier:

PDF, 496 KB

english, 2010

13

Characterization of dielectric properties and conductivity in encapsulation materials with high insulating filler contents

Cornigli, Davide, Reggiani, Susanna, Gnudi, Antonio, Gnani, Elena, Baccarani, Giorgio, Fabiani, Davide, Varghese, Dhanoop, Tuncer, Enis, Krishnan, Srikanth, Nguyen, Luu

Journal:

IEEE Transactions on Dielectrics and Electrical Insulation

Année:

2018

Langue:

english

Fichier:

PDF, 2.24 MB

english, 2018

14

Maximising the impact of social prescribing on population health in the era of COVID-19

Younan, Helen-Cara, Junghans, Cornelia, Harris, Matthew, Majeed, Azeem, Gnani, Shamini

Journal:

Journal of the Royal Society of Medicine

Année:

2020

Fichier:

PDF, 368 KB

2020

15

Theoretical foundations of the quantum drift-diffusion and density-gradient models

Giorgio Baccarani, Elena Gnani, Antonio Gnudi, Susanna Reggiani, Massimo Rudan

Journal:

Solid-State Electronics

Année:

2008

Langue:

english

Fichier:

PDF, 340 KB

english, 2008

16

Modeling of gate-all-around charge trapping SONOS memory cells

E. Gnani, S. Reggiani, A. Gnudi, G. Baccarani, J. Fu, N. Singh, G.Q. Lo, D.L. Kwong

Journal:

Solid-State Electronics

Année:

2010

Langue:

english

Fichier:

PDF, 1.07 MB

english, 2010

17

Nanostructured pure and Nb-doped TiO2 as thick film gas sensors for environmental monitoring

M.C Carotta, M Ferroni, D Gnani, V Guidi, M Merli, G Martinelli, M.C Casale, M Notaro

Journal:

Sensors and Actuators B: Chemical

Année:

1999

Langue:

english

Fichier:

PDF, 661 KB

english, 1999

18

Nanosized thin films of tungsten-titanium mixed oxides as gas sensors

M Ferroni, D Boscarino, E Comini, D Gnani, V Guidi, G Martinelli, P Nelli, V Rigato, G Sberveglieri

Journal:

Sensors and Actuators B: Chemical

Année:

1999

Langue:

english

Fichier:

PDF, 291 KB

english, 1999

19

Impact-ionization coefficient in silicon at high fields— a

M. Rudan, R. Katilius, S. Reggiani, E. Gnani, G. Baccarani

Journal:

Journal of Computational Electronics

Année:

2008

Langue:

english

Fichier:

PDF, 284 KB

english, 2008

20

Hot-carrier stress induced degradation in Multi-STI-Finger LDMOS: An experimental and numerical insight

S. Poli, S. Reggiani, G. Baccarani, E. Gnani, A. Gnudi, M. Denison, S. Pendharkar, R. Wise

Journal:

Solid-State Electronics

Année:

2011

Langue:

english

Fichier:

PDF, 790 KB

english, 2011

21

Steep-slope nanowire FET with a superlattice in the source extension

E. Gnani, S. Reggiani, A. Gnudi, G. Baccarani

Journal:

Solid-State Electronics

Année:

2011

Langue:

english

Fichier:

PDF, 998 KB

english, 2011

22

Numerical investigation on the junctionless nanowire FET

E. Gnani, A. Gnudi, S. Reggiani, G. Baccarani, N. Shen, N. Singh, G.Q. Lo, D.L. Kwong

Journal:

Solid-State Electronics

Année:

2012

Langue:

english

Fichier:

PDF, 1.01 MB

english, 2012

23

Explanation of the Rugged LDMOS Behavior by Means of Numerical Analysis

Reggiani, S., Baccarani, G., Gnani, E., Gnudi, A., Denison, M., Pendharkar, S., Wise, R., Seetharaman, S.

Journal:

IEEE Transactions on Electron Devices

Année:

2009

Langue:

english

Fichier:

PDF, 960 KB

english, 2009

24

A Low-Field Mobility Model for Bulk, Ultrathin Body SOI and Double-Gate n-MOSFETs With Different Surface and Channel Orientations—Part I: Fundamental Principles

Silvestri, L., Reggiani, S., Gnani, E., Gnudi, A., Baccarani, G.

Journal:

IEEE Transactions on Electron Devices

Année:

2010

Langue:

english

Fichier:

PDF, 410 KB

english, 2010

25

Physics-Based Analytical Model for HCS Degradation in STI-LDMOS Transistors

Reggiani, S., Poli, S., Denison, M., Gnani, E., Gnudi, A., Baccarani, G., Pendharkar, S., Wise, R.

Journal:

IEEE Transactions on Electron Devices

Année:

2011

Langue:

english

Fichier:

PDF, 1.13 MB

english, 2011

26

Analysis of Threshold Voltage Variability Due to Random Dopant Fluctuations in Junctionless FETs

Gnudi, A., Reggiani, S., Gnani, E., Baccarani, G.

Journal:

IEEE Electron Device Letters

Année:

2012

Langue:

english

Fichier:

PDF, 323 KB

english, 2012

27

Drain-conductance optimization in nanowire TFETs by means of a physics-based analytical model

Gnani, E., Gnudi, A., Reggiani, S., Baccarani, G.

Journal:

Solid-State Electronics

Année:

2013

Langue:

english

Fichier:

PDF, 675 KB

english, 2013

28

[IEEE 2011 12th International Conference on Ultimate Integration on Silicon (ULIS) - Cork, Ireland (2011.03.14-2011.03.16)] Ulis 2011 Ultimate Integration on Silicon - Numerical investigation on the junctionless nanowire FET

Gnani, E., Gnudi, A., Reggiani, S., Baccarani, G., Shen, N., Singh, N., Lo, G. Q., Kwong, D. L.

Année:

2011

Langue:

english

Fichier:

PDF, 297 KB

english, 2011

29

[IEEE 2007 IEEE Nuclear Science Symposium Conference Record - Honolulu, HI, USA (2007.10.26-2007.11.3)] 2007 IEEE Nuclear Science Symposium Conference Record - A low noise, radiation tolerant CCD readout processor for the proposed SNAP satellite.

Karcher, A., Abiad, R., Bebek, C.J., Chao, G.Y., Gnani, D., Krieger, B., von der Lippe, H., Reith, J., Walder, J.-P.

Année:

2007

Langue:

english

Fichier:

PDF, 521 KB

english, 2007

30

Radiation-Tolerant Code-Density Calibration of Nyquist-Rate Analog-to-Digital Converters

Grace, C. R., Denes, P., Gnani, D., von der Lippe, H., Walder, J.

Journal:

IEEE Transactions on Nuclear Science

Année:

2013

Langue:

english

Fichier:

PDF, 603 KB

english, 2013

31

Experimental investigation on shock wave diffraction over sharp and curved splitters

Gnani, F., Lo, K.H., Zare-Behtash, H., Kontis, K.

Journal:

Acta Astronautica

Année:

2014

Langue:

english

Fichier:

PDF, 2.00 MB

english, 2014

32

[IEEE 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Kanazawa (2013.5.26-2013.5.30)] 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - TCAD predictions of linear and saturation HCS degradation in STI-based LDMOS transistors stressed in the impact-ionization regime

Reggiani, S., Barone, G., Gnani, E., Gnudi, A., Baccarani, G., Poli, S., Chuang, M.-Y, Tian, W., Wise, R.

Année:

2013

Langue:

english

Fichier:

PDF, 1.06 MB

english, 2013

33

[IEEE ESSDERC 2012 - 42nd European Solid State Device Research Conference - Bordeaux, France (2012.09.17-2012.09.21)] 2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC) - TCAD degradation modeling for LDMOS transistors

Reggiani, S., Barone, G., Gnani, E., Gnudi, A., Poli, S., Chuang, M.-Y., Tian, W., Wise, R.

Année:

2012

Langue:

english

Fichier:

PDF, 937 KB

english, 2012

34

[IEEE Electrical Performance of Electronic Packaging - Austin, TX (2004.10.27-2004.10.27)] Electrical Performance of Electronic Packaging IWCE-04 - On the electrostatics of double-gate and cylindrical nanowire MOSFETs

Gnani,, Reggiani,, Rudan,, Baccarani,

Année:

2004

Langue:

english

Fichier:

PDF, 116 KB

english, 2004

35

[IEEE 2009 Proceedings of the European Solid State Device Research Conference (ESSDERC) - Athens, Greece (2009.09.14-2009.09.18)] 2009 Proceedings of the European Solid State Device Research Conference - Theoretical analysis of the vertical LOCOS DMOS transistor with process-induced stress enhancement

Reggiani, S., Denison, M., Gnani, E., Gnudi, A., Baccarani, G., Pendharkar, S., Wise, R.

Année:

2009

Langue:

english

Fichier:

PDF, 1.12 MB

english, 2009

36

Temperature Dependence of the Threshold Voltage Shift Induced by Carrier Injection in Integrated STI-Based LDMOS Transistors

Poli, Stefano, Reggiani, Susanna, Denison, Marie, Gnani, Elena, Gnudi, Antonio, Baccarani, Giorgio, Pendharkar, Sameer, Wise, Rick

Journal:

IEEE Electron Device Letters

Année:

2011

Langue:

english

Fichier:

PDF, 313 KB

english, 2011

37

[IEEE 2010 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2010) - Bologna, Italy (2010.09.6-2010.09.8)] 2010 International Conference on Simulation of Semiconductor Processes and Devices - Numerical investigation of the total SOA of trench field-plate LDMOS devices

Poli, S., Reggiani, S., Baccarani, G., Gnani, E., Gnudi, A., Denison, M., Pendharkar, S., Wise, R.

Année:

2010

Langue:

english

Fichier:

PDF, 499 KB

english, 2010

38

[IEEE 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Waikoloa, HI, USA (2014.6.15-2014.6.19)] 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Linear drain current degradation of STI-based LDMOS transistors under AC stress conditions

Reggiani, S., Monti, F., Barone, G., Gnani, E., Gnudi, A., Baccarani, G., Poli, S., Chuang, M.-Y., Tian, W., Wise, R.

Année:

2014

Langue:

english

Fichier:

PDF, 1.23 MB

english, 2014

39

[IEEE 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Waikoloa, HI, USA (2014.6.15-2014.6.19)] 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - TCAD modeling of charge transport in HV-IC encapsulation materials

Imperiale, I., Reggiani, S., Gnani, E., Gnudi, A., Baccarani, G., Nguyen, L., Denison, M.

Année:

2014

Langue:

english

Fichier:

PDF, 1.02 MB

english, 2014

40

[IEEE IC's (ISPSD) - Barcelona, Spain (2009.06.14-2009.06.18)] 2009 21st International Symposium on Power Semiconductor Devices & IC's - Investigation on saturation effects in the rugged LDMOS transistor

Reggiani, S., Gnani, E., Gnudi, A., Baccarani, G., Denison, M., Pendharkar, S., Wise, R., Seetharaman, S.

Année:

2009

Langue:

english

Fichier:

PDF, 487 KB

english, 2009

41

Investigation of Hot Carrier Stress and Constant Voltage Stress in High- $\kappa$ Si-Based TFETs

Ding, Lili, Gnani, Elena, Gerardin, Simone, Bagatin, Marta, Driussi, Francesco, Palestri, Pierpaolo, Selmi, Luca, Le Royer, Cyrille, Paccagnella, Alessandro

Journal:

IEEE Transactions on Device and Materials Reliability

Année:

2015

Langue:

english

Fichier:

PDF, 1.47 MB

english, 2015

42

A quasi 2D semianalytical model for the potential profile in hetero and homojunction tunnel FETs

Villani, F., Gnani, E., Gnudi, A., Reggiani, S., Baccarani, G.

Journal:

Solid-State Electronics

Année:

2015

Langue:

english

Fichier:

PDF, 768 KB

english, 2015

43

[IEEE 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Hong Kong, China (2015.5.10-2015.5.14)] 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Optimization of HV LDMOS devices accounting for packaging interaction

Arienti, G., Imperiale, I., Reggiani, S., Gnani, E., Gnudi, A., Baccarani, G., Nguyen, L., Hernandez-Luna, A., Huckabee, J., Denison, M.

Année:

2015

Langue:

english

Fichier:

PDF, 645 KB

english, 2015

44

[IEEE 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Hong Kong, China (2015.5.10-2015.5.14)] 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Numerical study of GaN-on-Si HEMT breakdown instability accounting for substrate and packaging interactions

Monti, F., Imperiale, I., Reggiani, S., Gnani, E., Gnudi, A., Baccarani, G., Nguyen, L., Hernandez-Luna, A., Huckabee, J., Tipirneni, N., Denison, M.

Année:

2015

Langue:

english

Fichier:

PDF, 488 KB

english, 2015

45

TCAD analysis of the leakage current and breakdown versus temperature of GaN-on-Silicon vertical structures

Cornigli, Davide, Monti, Federico, Reggiani, Susanna, Gnani, Elena, Gnudi, Antonio, Baccarani, Giorgio

Journal:

Solid-State Electronics

Année:

2015

Langue:

english

Fichier:

PDF, 1.27 MB

english, 2015

46

The design for test architecture in digital section of the ATLAS FE-I4 chip

Zivkovic, V, Schipper, J -D, Kluit, R, Garcia-Sciveres, M, Mekkaoui, A, Barbero, M, Beccherle, R, Gnani, D, Hemperek, T, Karagounis, M, Menouni, M, Fougeron, D, Gensolen, F, Gromov, V, Kruth, A, Darbo

Journal:

Journal of Instrumentation

Année:

2011

Langue:

english

Fichier:

PDF, 1.01 MB

english, 2011

47

The FE-I4 pixel readout system-on-chip resubmission for the insertable B-Layer project

Zivkovic, V, Schipper, J-D, Garcia-Sciveres, M, Mekkaoui, A, Barbero, M, Darbo, G, Gnani, D, Hemperek, T, Menouni, M, Fougeron, D, Gensolen, F, Jensen, F, Caminada, L, Gromov, V, Kluit, R, Fleury, J,

Journal:

Journal of Instrumentation

Année:

2012

Langue:

english

Fichier:

PDF, 1.33 MB

english, 2012

48

Promoting Mental Health and Preventing Mental Illness in General Practice

Thomas, Steve, Jenkins, Rachel, Burch, Tony, Calamos Nasir, Laura, Fisher, Brian, Giotaki, Gina, Gnani, Shamini, Hertel, Lise, Marks, Marina, Mathers, Nigel, Millington-Sanders, Catherine, Morris, Dav

Journal:

London Journal of Primary Care

Année:

2016

Langue:

english

Fichier:

PDF, 703 KB

english, 2016

49

Design and performance of a custom ASIC digitizer for wire chamber readout in 65 nm CMOS technology

Lee, M.J., Brown, D.N., Chang, J.K., Ding, D., Gnani, D., Grace, C.R., Jones, J.A., Kolomensky, Y.G., Lippe, H. von der, Mcvittie, P.J., Stettler, M.W., Walder, J.-P.

Journal:

Journal of Instrumentation

Année:

2015

Langue:

english

Fichier:

PDF, 1015 KB

english, 2015

50

Results of 65 nm pixel readout chip demonstrator array

Mekkaoui, A, Garcia-Sciveres, M, Gnani, D

Journal:

Journal of Instrumentation

Année:

2013

Langue:

english

Fichier:

PDF, 4.10 MB

english, 2013